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| Transistor 2SB766, 2SB766A Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD874 and 2SD874A Unit: mm s Features q q 2.60.1 0.4max. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB766 2SB766A 2SB766 VCEO VEBO ICP IC PC* Tj Tstg Symbol VCBO (Ta=25C) Ratings -30 -60 -25 -50 -5 -1.5 -1 1 150 -55 ~ +150 1cm2 Unit V 45 1.0-0.2 +0.1 0.40.08 0.50.08 1.50.1 3.00.15 3 2 1 4.0-0.20 0.40.04 emitter voltage 2SB766A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * V V A A W C C 1:Base 2:Collector 3:Emitter EIAJ:SC-62 Mini Power Type Package marking Marking symbol : Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board A(2SB766) B(2SB766A) s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SB766 2SB766A 2SB766 2SB766A (Ta=25C) Symbol ICBO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = -20V, IE = 0 IC = -10A, IE = 0 IC = -2mA, IB = 0 IE = -10A, IC = 0 VCE = -10V, IC = -500mA*2 VCE = -5V, IC = -1A*2 IC = -500mA, IB = -50mA*2 IC = -500mA, IB = -50mA*2 VCB = -10V, IE = 50mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz -30 -60 -25 -50 -5 85 50 - 0.2 - 0.85 200 20 *2 min typ max - 0.1 Unit A V Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance *1h FE1 340 - 0.4 -1.2 MHz 30 pF Rank classification Rank hFE1 Q 85 ~ 170 2SB766 2SB766A AQ BQ R 120 ~ 240 AR BR S 170 ~ 340 AS BS Pulse measurement Marking Symbol 2.50.1 +0.25 Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 4.50.1 1.60.2 1.50.1 V V V V 1 Transistor PC -- Ta 1.4 2SB766, 2SB766A IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) -1.50 Ta=25C -1.25 IB=-10mA -9mA -8mA -7mA -6mA -5mA -4mA -3mA -2mA -1mA -100 -30 -10 -3 -1 Ta=75C 25C -25C VCE(sat) -- IC IC/IB=10 Collector power dissipation PC (W) 1.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 1.0 Collector current IC (A) -1.00 0.8 - 0.75 0.6 - 0.50 - 0.3 - 0.1 - 0.03 0.4 0.2 - 0.25 0 0 20 40 60 80 100 120 140 160 0 0 -2 -4 -6 -8 -10 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC -100 hFE -- IC IC/IB=10 600 VCE=-10V 200 180 500 VCB=-10V Ta=25C fT -- I E Base to emitter saturation voltage VBE(sat) (V) Transition frequency fT (MHz) -1 -3 -10 -30 -10 -3 25C -1 75C Ta=-25C Forward current transfer ratio hFE 160 140 120 100 80 60 40 20 400 Ta=75C 300 25C 200 -25C - 0.3 - 0.1 - 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 100 -1 -3 -10 0 - 0.01 - 0.03 - 0.1 - 0.3 0 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob -- VCB 50 Area of safe operation (ASO) -10 IE=0 f=1MHz Ta=25C -3 ICP Single pulse Ta=25C Collector output capacitance Cob (pF) 45 40 35 30 25 20 15 10 5 0 -1 Collector current IC (A) -1 IC t=10ms t=1s - 0.3 - 0.1 - 0.03 - 0.01 2SB766A 2SB766 - 0.003 - 0.001 - 0.01 - 0.03 - 0.1 - 0.3 -3 -10 -30 -100 -1 -3 -10 Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) 2 |
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